infineon公司的600VCoolMOS™ C7是第五代PWM控制器,具有超低开关损耗,集成了700V和800V超结MOSFET,具有成套保护特性如输入OVP,输入欠压保护(brown in/out),引脚对GND和OTP延迟.此外还具有自动重起恢复功能,以最小化系统中断工作,主要用在服务器,电信,太阳能和工业应用.本文介绍了600 V CoolMOS™ C7主要特性和优势, 60W隔离反激SMPS应用电路以及采用600 V CoolMOS™ C7和XMC数控的800W Platinum®服务器电源主要特性和框图,主板和控制板电路图和材料清单.
The 600 V CoolMOS™ C7 series of devices offers a ~50% reduction in turn-off losses compared to the CoolMOS™ CP, offering a GaN-like level of performance in PFC, TTF and other hard-switching topologies. The CoolMOS™ C7 delivers an area-specific on-resistance (RDS(ON)*A) of just 1Ω per mm2, extending Infineon’s portfolio of products with lowest RDS(ON) per package to support customer efforts to further increase power density.
The 600 V CoolMOS C7 series features ultra-low switching losses and targets high-power SMPS applications such as server, telecom, solar and industrial applications requiring high efficiency and a reduced Bill of Materials (BOM) as well as low Total Cost of Ownership (TCO).
Applications driven by efficiency and TCO, such as hyper-scale data centers and telecom base stations, benefit from the switching loss reduction offered by CoolMOS C7. Efficiency gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved, leading to significant TCO benefits. In the case of a 2.5 kW server PSU, for example, using 600 V C7 MOSFETs can result in energy cost reductions of ~10% for PSU energy loss.
In BOM and cost-driven designs such as enterprise servers, the 600 V CoolMOS™ C7 devices offer a cost reduction in magnetics. Due to the significantly lower gate charge and output capacitance, the C7 can be operated at double the normal switching frequencies with only a marginal loss in efficiency. This allows the size of magnetic components to be minimized, lowering the overall BOM cost. For example, doubling the switching frequency from 65 kHz to 130 kHz may reduce the magnetic component cost by as much as 30%.Rapid start-up with cascode configuration
To achieve fast start-up performance, 5th generation controller utilize the high voltage MOSFET together with an internal current regulator to operate the start-up sequence in a safe and rapid manner, which is commonly known as cascode configuration.Upsized zero crossing counters for valley detection With the implementation of 10 zero crossing counters, the ability to detect AC line input level and an intelligent adaptive digital algorithm (patent pending), it enabled the5th generation controller to minimize the spread of switching frequency under differentAC line input conditions. This innovative approach has enabled SMPS designers to designwith higher switching frequency to take advantage of smaller magnetics and lowering ofsystem BOM cost.
Run cooler with CoolMOSTM P7 family In tandem with Infineon’s leadership in the area of high voltage superjunction MOSFETs,the latest 700 V and 800 V CoolMOS™ P7 families will be integrated together with the 5th generation controller in a single package.CoolSETTM is available in both through-holeand SMD packages and thereby eliminates the need of heatsink and reduces BOM countwith a small footprint.
Comprehensive suite of protection features In addition to the typical output protection such as output short, overload and overvoltage protection, the 5th generation controller is incorporating additional protections todetect abnormal line input conditions such as over-voltage and under-voltage protection.
Similarly, in-system-protection has been further enhanced with the introduction ofVCC and CS pin short to ground to prevent controller damage during abnormal start-upconditions and OTP has been enhanced with hysteresis to improve operational faulthandling. To minimize interruption to system operation, all protection modes areimplemented with auto resume to enhance user experience.
600 V CoolMOS™ C7主要特性:
››Integrated 700 V and 800 Vsuperjunction MOSFET withavalanche capability
››Comprehensive suite of protectionwhich include input OVP, brownin/out, pin short to GND and OTPwith hysteresis
››Innovative quasi-resonant switchingscheme to minimize frequencyspread under different line inputconditions
600 V CoolMOS™ C7主要优势:
››High efficiency with latestCoolMOSTM P7 family andquasi-resonant switching scheme
››Auto-restart recovery scheme tominimize interruption to systemoperation
››Extensive protection coverage toincrease system robustness
››Rapid start-up performance withcascode configuration
采用600 V CoolMOS™ C7和XMC数控的800W Platinum®服务器电源
This document introduces a complete Infineon system solution for an 800 W server power supply, which achieves the 80Plus® Platinum® standard. The power supply is composed of a Continuous Conduction Mode (CCM) Power Factor Correction (PFC) converter and a half-bridge LLC DC-DC converter. This document focuses on the necessary microcontroller configuration and the implemented control for adequate system performance, which is demonstrated with test results.
The Infineon components used in the 800 W server power supply are:
600 V CoolMOS™ C7 superjunction MOSFET in TO-247 4-pin and TO-220 packages as well as 650 V CoolSiC™ Schottky diode Gen5
40 V and 25 V OptiMOS™ 5 MOSFETs
1EDI20N12AF isolated and 2EDN7524F non-isolated gate drivers (EiceDRIVER™) XMC1402 and XMC4200 microcontrollers
ICE2QR2280G CoolSET™ QR flyback controller
The 600 V CoolMOS™ C7 MOSFET technology in soft-switching topologies like the LLC working at a resonant frequency around 150 kHz
The isolated and the non-isolated gate drivers from the EiceDRIVER™ IC family
The flexibility and performance power of the XMCTM microcontrollers for server power supplies
Attractive compact design in 30 W/in3 form factor
Efficiency that outperforms the Platinum® efficiency standard throughout the entire load demand at both 115 V AC and 230 V AC, as shown in Performance and steady-state operation Figure 41 in section 6.1
Low Total Harmonic Distortion (THD) and high PF response, as shown in Figure 42 and Figure 43 respectively, from 20% of the load
Fully digital control implementation in both the PFC boost converter using XMC1400, as described in the Power factor correction stage section, and the LLC resonant converter using the XMC4200, as described in the LLC resonant DC-DC converter section
High performance achieved by using Infineon Technologies best-in-class devices:
o Single TO-247 4-pin 600 V CoolMOSTM C7 SJ MOSFET in the PFC boost converter, along with a single TO-220 650 V CoolSiCTMschottky diode Gen5
o TO-220 600 V CoolMOSTM C7 SJ MOSFET on the primary side of the LLC resonant converter and OptiMOSTM 5 40 V and 25 V as Synchronous Rectification (SR) and ORing MOSFETs, respectively
oEiceDRIVERTM 1EDI isolated and EiceDRIVERTM 2EDN non-isolated gate driver ICs
o QR flyback controller ICE2QR2280G CoolSET™
Robust and realiable operation under different abnormal conditions:
o Smooth inrush current during start-up as shown in Figure 46
o Power Line Disturbance (PLD) events, like AC Line Drop Out (ACLDO) as described in Table 8, as well as voltage sags as describes in Table 9
o Brownout reaction .
o Load-step reponse at different abrupt load changes.
o Over Current (OC) condition reaction as described in the Over Current Protection (OCP) section, as well as the response of the PSU in case of a short-circuit event.
Fully compliant with both peak and average Class B conducted EMI EN 55022 standard limits.
图6.800W Platinum®服务器电源控制板和XMC MCU主要特性图